Intrinsic Reliability Lead Head – Semiconductor Device Reliability
Posted:
9 June 2026 (30+ days ago)
Application Deadline:
6 September 2026
Vacancies:
1 Vacancy
Job Summary
Intrinsic Reliability Lead / Head Semiconductor Device Reliability
- Location: Dholera / Ahmedabad Gujarat India
- Work Mode: Onsite
- Experience: 15 Years
Lead the development of semiconductor intrinsic and product reliability capability for a new semiconductor manufacturing organization. Responsible for establishing reliability laboratories defining reliability methodologies driving qualification programs and building high-performing reliability teams. This role requires deep expertise in semiconductor device failure mechanisms accelerated testing reliability modelling and technology qualification.
Key Responsibilities- Define intrinsic and product-level reliability requirements.
- Establish and operationalize reliability laboratories and testing infrastructure.
- Procure and qualify reliability test and monitoring equipment.
- Develop standardized reliability test procedures and methodologies.
- Support R&D and technology transfer programs through reliability analysis.
- Lead intrinsic and product reliability qualification strategies.
- Develop reliability models for device aging and degradation.
- Analyze semiconductor failure mechanisms and qualification data.
- Build and lead global cross-functional reliability teams.
- Drive customer confidence through reliability assurance programs.
- Present reliability results to executive leadership and customers.
- Support new technology introduction and manufacturing qualification.
- M.S. or PhD in Physics Electrical Engineering Materials Science or related discipline.
- 15 years of semiconductor industry experience.
- Proven experience establishing advanced semiconductor reliability laboratories.
- Strong background in intrinsic device reliability and product reliability.
- Intrinsic Reliability
- Product Reliability
- Device Reliability
- Reliability Qualification
- Hot Carrier Injection (HCI)
- Time Dependent Dielectric Breakdown (TDDB)
- Negative Bias Temperature Instability (NBTI)
- Electromigration (EM)
- Stress Migration (SM)
- HTOL
- HTRB
- HTGB
- Accelerated Reliability Testing
- Reliability Monitoring
- Aging Models
- Lifetime Prediction
- Reliability Statistics
- Design of Experiments (DOE)