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Principal Device Design & Integration Engineer


Job Location:

San Jose, CA - USA

Monthly Salary: Not provided by the employer
Posted: 3 September 2026 (17 hours ago)
Application Deadline: 1 December 2026
Vacancies: 1 Vacancy

Job Summary

We are seeking a Design Engineer to lead the development of test vehicles supporting our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle definition circuit and layout design and characterization planning from concept through silicon bring-up working closely with process development product engineering and applications teams. The ideal candidate has hands-on experience designing power devices and circuits at both the IC and module level and is fluent in the power topologies these test vehicles are ultimately intended to support.

Key Responsibilities

  • Define design and drive execution of test vehicles (TVs) for high-current BCD and LV GaN process technologies including device test structures scaled power stages and full-function demonstration circuits.
  • Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications.
  • Design and simulate power stage circuits (e.g. synchronous buck/boost multiphase half-bridge/DrMOS gate drivers) used to validate device performance under realistic switching and thermal conditions.
  • Select and characterize power devices (LDMOS trench MOSFETs LV GaN HEMTs Schottky/sync rectifiers) for inclusion in test structures working with device/process engineering on layout-dependent tradeoffs (RDS(ON) Qg breakdown voltage SOA).
  • Perform IC-level layout and design for test structures including parasitic-aware layout for switch nodes current sensing and gate drive paths.
  • Extend designs to module/package level as needed co-design of power stages with packaging magnetics and PCB layout for evaluation boards and system-level test vehicles.
  • Develop test and characterization plans covering DC parametrics switching performance efficiency transient response and voltage/current stress margins (including switch-node ringing and abs-max validation).
  • Lead or support silicon bring-up debug and correlation of measured results against simulation and design targets.
  • Collaborate cross-functionally with process integration reliability product/applications engineering and test engineering to close the loop from process split data to product-ready specifications.
  • Document design methodology test vehicle results and characterization data to support technology qualification and product development decisions.

Qualifications :

  • Bachelors or Masters degree in Electrical Engineering Microelectronics or related field.
  • 10 years of hands-on design experience in power semiconductor devices analog/power ICs or power electronics.
  • Strong working knowledge of power conversion topologies (e.g. buck boost multiphase/interleaved converters half-bridge DrMOS/Intelli-Phase-style architectures) and how topology choices drive device requirements.
  • Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN (particularly low-voltage GaN HEMTs) including RDS(ON) switching loss gate charge breakdown/avalanche behavior and thermal characteristics.
  • Demonstrated experience designing test structures or test chips/vehicles for process technology development (not just product design) comfortable defining what a process node needs to prove out.
  • IC-level design and layout experience including parasitic-sensitive layout practices for high-current switching nodes.
  • Experience taking designs beyond the die level to module package or board level (e.g. power module co-design evaluation board layout thermal/electrical co-design).
  • Proficiency with circuit simulation tools (SPICE or equivalent) and familiarity with device/TCAD simulation concepts.
  • Ability to interpret and specify absolute maximum ratings transient voltage tolerance and protection thresholds (OVP/UVP/OCP/OTP) relevant to power stage reliability.
  • Strong lab skills: bring-up debug and characterization using oscilloscopes curve tracers power analyzers and thermal imaging.

Additional Information :

The expected annual pay range for this position is $180K - $230K. This position is also eligible for bonus opportunities. Please note that final offer amount will be dependent on geographic location applicable experience and skillset of the candidate.

Renesas offers a full range of elective benefits including medical health savings account (with applicable medical plan) dental vision health and/or dependent care flexible spending accounts pre-tax commuter benefits life insurance AD&D and pet addition to elective benefit options benefited employees receive company-paid life insurance and AD&D LTD short term medical benefits as well as paid sick time paid holidays and accrued paid vacation. New employees will attend a detailed benefit orientation to learn more about our many benefits and resources.

Renesas is an embedded semiconductor solution provider driven by its Purpose To Make Our Lives Easier. With a global team of over 21000 engineers and problem solvers in more than 30 countries we offer the opportunity to work on worldleading technology for Automotive Industrial Infrastructure and IoT shaping a safer healthier greener and smarter future.

At Renesas TAGIE is our culture grounded in being Transparent Agile Global Innovative and Entrepreneurial. It shapes how we work grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us

Renesas Electronics is an equal opportunity and affirmative action employer committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex race religion national origin gender gender identity gender expression age sexual orientation military status veteran status or any other basis protected by law. For more information please read our Diversity & Inclusion Statement.

Renesas Electronics deals with dual-use technology that is subject to U.S. export controls regulations. Under these regulations it may be necessary for Renesas to obtain U.S. government export license prior to release of technology to certain persons. The decision whether or not to file or pursue an export license application is at the sole discretion of Renesas.


Remote Work :

No


Employment Type :

Full-time


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