SeniorPrincipal Datapath Design Engineer

Department Intro:

TheNonVolatile Engineering Group(NVEG) a division within the Technology and Products Group (TPG) is dedicated to advancing nonvolatile memory technologies such as NAND. Our primary mission is to innovate and develop ground breaking solutions that improve the performance and reliability of nonvolatile memory products.

Position Overview:

As a Principal Datapath Design Engineer in Micron Technology Inc. you will play a crucial role in developing new memory products. Your responsibilities will include designing analyzing and optimizing digital and analog circuits as well as collaborating with various teams to ensure the best cost quality reliability and customer satisfaction. This role offers opportunities for professional growth and leadership within a multifaceted and collaborative environment.

Responsibilities:

• Lead the design analysis and optimization of digital and analog circuits for new memory products ensuring outstandingperformance power and area (PPA) optimization.

• Define architecture and chip plans including placement and routing optimization to achieve ambitious goals.

• Design highspeed Datapath circuits at the block level model parasitics and supervise layout to ensure worldclass performance.

• Perform circuit simulations using industrystandard simulators to validate functionality and performance.

• Collaborate with domain experts and partners to bring together and review the final design details ensuring designs operate within safe reliability operating ranges.

• Stay updated with the latest industry trends and technologies to maintain a competitive edge.

• Mentor and provide consultation to internal and external team members aiding in communicating bestknown practices to the entire department.

Minimum Qualifications:

• Bachelors degree or equivalent experience in Electrical Engineering or a related field.

• 5 years of proven experience in Datapath design and highspeed circuit design.

• Handson experience with RTL writing and synthesis.

• Knowledge of highspeed circuit performance power and area optimization.

• 5 years of working with NVDDR interfaces including Singleended Rx Tx SerDeS Equalizer and ZQ.

Preferred Qualifications:

• Masters degree or equivalent experience in Electrical Engineering or a related field.

• Experience with highspeed interfaces for NAND applications such as NVDDR4/LPDDR5/LPDDR6.

• Understanding of CMOS process and BSIM model.

• 7 years of experience successfully designing and implementing sophisticated design projects.

• Excellent interpersonal skills and the ability to collaborate with multidisciplinary teams to achieve spectacular results.

• Proficiency in industrystandard design and simulation tools such as Cadence Synopsys and Mentor Graphics.

About You:

• You are a meticulous engineer with a consistent track record in highspeed digital and analog circuit design.

• You communicate complex concepts effectively to diverse audiences and collaborate seamlessly with crossdepartmental teams.

• Youre a proactive selfstarter with strong problemsolving skills with experience of handling multiple projects under tight schedules.

• You prioritize measurable impact and are driven by results always seeking innovative solutions.

• You are committed to continuous learning staying updated with industry trends and dedicated to Microns mission and values.