DescriptionRole:Research Associate in HighSpeed Organic OptoElectronics (HiSOPE)
Grade andSalary:
FTE and working pattern:Full Time (1FTE) Fixed Term for 20 months
Annual Leave:33 days plus 9 buildings closed days (and Christmas Eve when it falls on a weekday).
Detailed Description
HiSOPE (HighSpeed Organic Photonics and OptoElectronics) is an EIC Pathfinder Responsible Electronics project under Horizon Europe (Grant ) with partners including CNRS CEALeti TU Eindhoven and Kaunas University of Technology St Andrew University and University Sorbonne Paris Nord. The total budget is 3.07M. Its aim is to develop sustainable highspeed organic optoelectronic materials devices and systems as lowerimpact alternatives to IIIV platforms.
The role requires circuit RF/microwave and measurement expertise to support demonstrators that drive highspeed OLEDs collect photodiode signals and validate systemlevel links.
Purpose of Role
Design implement and characterise highspeed electronic and RF frontends to drive OLEDs with highvoltage nanosecond pulses interface them with highbandwidth photodiode receive chains and perform full EM and calibration workflows on bespoke PCB fixtures that validate link performance for optical interconnects / wireless light communications demonstrators within HiSOPE.
Key Duties and Responsibilities
- Conduct and disseminate original research aligned with the project and in collaboration with the team; work as part of the broader HiSOPE project to help organize events and/or support the work of the team as needed; contribute to outreach and impact engagement activities of the project
- Work closely with senior decision makers in the industry to enable a programme of work and the measurement of this; participate in and develop networks and collaborations both internally and externally to the Division/School/University
- Identify appropriate sources of funding and help prepare research proposals for funding bodies
- Demonstrate initiative in making routine decisions in order to manage and achieve project deliverables and deadlines
- Pulse driver & power delivery: Design highvoltage fastedge pulse drivers (ns to subns rise/fall where feasible) for OLED excitation including device protection impedance control and EMI mitigation; architect lowinductance current paths gatedrive schemes (e.g. GaN/Si MOSFET drivers) and snubbers tailored to OLED stack constraints and test coupons used in HiSOPE
- RF/microwave PCB & interconnects: Layout controlledimpedance CPW/microstrip transitions from drivers to OLED fixtures; model launch structures vias and groundreference strategies to >GHz bandwidths; codesign bespoke PCB test fixtures for deviceundertest (DUT) sockets with 3D EM simulation (CST/ADS Momentum) to predict Sparameters radiation resonances and thermal aspects
- Receiver chain and calibration: Design transimpedance amplifiers (TIA) for fast including stability/peaking control input capacitance management and ESD; implement onboard calibration standards and perform LRM/TRL calibrations (VNA) from coax to CPW launches for deembedded Sparameters
- Modelling linearisation and system integration: Extract behavioural models of the OLED electrooptical transfer and PD/TIA chain (e.g. Volterra/memory polynomial WienerHammerstein) from measured data; apply digital predistortion (DPD) to meet waveform fidelity and bandwidth targets; integrate electronic frontends with HiSOPE device stacks in collaboration with materials/device partners; contribute to optical interconnect and wireless light communication system demos
- Reporting: Maintain rigorous documentation; contribute to deliverables publications and consortium reviews; present results at portfolio activities within EIC Responsible Electronics
Essential Criteria
Qualifications
- PhD (or close to completion) in Electrical/Electronics Engineering or related field with a focus on highspeed circuits/RF.
Knowledge Skills & Experience
- Evidence of a developing publication record
- Experience or desire to work with those from other disciplines
- Evidence of excellent administrative and project management skills
- Evidence of self-motivation and the ability to work independently
- Evidence of excellent oral and written communication skills
- Excellent time management skills including the ability to prioritise workload
- Proven experience designing highvoltage fastrise pulse circuits and/or RF/microwave PCB layouts.
- Handson 3D EM simulation of PCB/fixture structures and correlation to measurements.
- Strong background in photodiode frontends (TIAs) noise/stability analysis and GHzclass measurement techniques
- Practical experience with vector network analyzers and onPCB LRM/TRL calibration/deembedding.
- Proven experience in behavioural modelling and DPD (MATLAB/Python)
Desirable Criteria
Knowledge Skills & Experience
- Evidence of success in attracting research grants/external funding and delivering on externally funded research projects
- Evidence or knowledge to support international activities
- Evidence of a basic knowledge of the Higher Education context and regulatory framework
- Familiarity with organic/OPTO device physics (OLED stacks drive limits degradation optical modulation bandwidths.
- Experience with highspeed optical links or wireless light communication (LiFi/VLC) demonstrators.
How to Apply
Please submit via the Heriot-Watt on-line recruitment system (1) Cover letter describing their interest and suitability for the post; (2) Full CV
Applications can be submitted until midnight on Thursday 16th April 2026.
Heriot-Watt University is committed to securing equality of opportunity in employment and to the creation of an environment in which individuals are selected trained promoted appraised and otherwise treated on the sole basis of their relevant merits and abilities. Equality and diversity are all about maximising potential and creating a culture of inclusion for all.
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We welcome and will consider flexible working patterns e.g. part-time working and job share options.
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