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Bidirectional transistors represent an emerging class of power devices capable of blocking voltage in both directions thanks to two independently controlled gate electrodes. Through monolithic integration bidirectional GaN HighElectronMobilityTransistors (HEMTs) can be realized using only a quarter of the chip area required by two discrete unidirectional devices in a commondrain configuration. This makes them a pivotal technology for enabling compact and efficient nextgeneration power converter topologies.
Qualifications :
Additional Information :
Start: according to prior agreement
Duration: 6 months
Requirement for this thesis is the enrollment at university. Please attach your CV transcript of records examination regulations and if indicated a valid work and residence permit.
Diversity and inclusion are not just trends for us but are firmly anchored in our corporate culture. Therefore we welcome all applications regardless of gender age disability religion ethnic origin or sexual identity.
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Magnus Haitz (Functional Department)
#LIDNI
Remote Work :
No
Employment Type :
Fulltime
Full-time