PhD Student - MBE of AlN-Based Heterostructures
PhD Student - MBE of AlN-Based Heterostructures
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Job Description
PhD student (m/f/d)
Molecular Beam Epitaxy of AlNBased UltrawideBandgap Semiconductor Heterostructures
Alrich (AlGa)N and AlN are ultrawide bandgap (UWBG) semiconductors that have gained significant interest for nextgeneration RF power and UV light devices. Wurtzite group IIInitride semiconductor heterostructures exhibit strong spontaneous and piezoelectric polarization fields reaching several MV/cm along the polar caxis. Consequently beyond conventional bandgap engineering polarization engineering provides new opportunities for designing advanced photonic and electronic devices within these heterostructures.
In this project the successful candidate will focus on designing and growing UWBG polar group IIInitride heterostructures using molecular beam epitaxy (MBE) for novel electronic devices that leverage polarization engineering. Compositionally graded alloy growth will be utilized to enhance doping efficiency and improve ohmic contact formation. Additionally various growth conditions will be investigated to achieve reliable doping control in binary AlN. Ultimately Alrich (AlGa)N and AlNbased diodes and fieldeffect transistors will be grown fabricated and characterized.
- Growth of nitride heterostructures by molecular beam epitaxy
- Sample characterization by xray diffractometry atomic force microscopy andHalleffect and CV measurements
- Band diagram simulation using 1D PoissonSchrdinger solver
- Active involvement of device fabrication and characterization
- Data analysis and planning of experiments
- Presentation of results at conferences and in publications
- Master degree in physics electrical engineering materials science or a related field
- Preferentially background in device physics or nanotechnology
- Experience with device fabrication is advantageous
This position is available immediately is limited to a 3year period initially with the perspective of a 1year extension.
Salary and benefits are according to the Treaty for German public service (TVD Bund) to a level of E13 75.
- Modern laboratories with a wide range of experimental techniques
- Supportive environment with experts for various scientific subfieldsand a low number of students per advisor
- International and culturally diverse community
- Location in the heart of Berlin with excellent public transport connections
- a subsidized travel ticket
- Possibility to participate in professional development and/or student exchange programs
The PaulDrudeInstitute is part of the Forschungsverbund Berlin e.V. and a member of the Leibniz Association. The institute carries out basic and applied research at the nexus of materials science condensed matter physics and device engineering.
In the Epitaxy department at PDI a dedicated team of scientists technicians postdocs and students operates 13 MBE systems for the synthesis of a wide range of material systems including arsenides nitrides oxides and 2D materials. This inhouse collaborative environment offers abundant opportunities for both direct and indirect learning in various MBE technologies making it an ideal place to start a career in the field.
For scientific information about the project please contact Dr. Yongjin Cho at
With approximately 100 employees and more than 15 nationalities PDI is committed to building a talented inclusive and culturally diverse workforce. We understand that our shared future is guided by basic principles of fairness and mutual respect.
Among equally qualified applicants preference will be given to candidates from marginalized groups. That means we welcome every qualified application regardless of sex and gender origin nationality religion belief health and disabilities age or sexual orientation.
Please upload your application by April 18 2025.
Your documents have to include
- a dedicated cover letter
- CV
- diploma(s) and transcript(s)
- contact information of two references
- publication list (if present)
Required Experience:
Unclear Seniority
Employment Type
Part-Time
