Engineer, Design
Job Summary
Our vision is to transform how the world uses information to enrich life for all.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence inspiring the world to learn communicate and advance faster than ever.
Department Introduction
The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with multi-functional teams ensures scalable manufacturable and reliable solutions across technology nodes. Come and join us!
Position Overview
As a Senior Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia you will contribute to the development of bestinclass NAND Flash memory products focusing on datapath architectures and highspeed interfaces.
In this role you will support the design optimization and validation of NAND datapath logic and DDR highspeed interfaces working at block and subsystem level and contributing to fullchip integration. You will apply your expertise in highspeed CMOS circuits timing signal integrity and power optimization using both industrystandard tools and Micronproprietary methodologies.
Responsibilities
Responsibilities include but not limited to:
Design and optimize high-speed datapath and interface circuits ensuring timing closure and performance at block and sub-system level.
Translate system and interface requirements into circuit architectures and transistor-level implementations balancing performance power and area.
Perform functional timing and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis).
Collaborate with multi-functional teams to ensure accurate floorplan integration manufacturability and alignment with product specifications.
Develop and apply automation solutions (e.g. scripting AI-assisted methodologies) and support silicon validation debug and documentation.
Min Qualifications
M.S. or Ph.D. in Electrical Engineering Electronics or a related field.
Solid understanding of high-speed digital analog and mixed-signal CMOS circuit design.
Solid understanding of timing signal integrity noise variability and deep-submicron device effects.
Hands-on experience with industry-standard simulation tools (e.g. SPICE mixed-signal RTL/Verilog-based flows).
Strong problem-solving and communication skills with ability to work effectively in dynamic multi-functional environments.
Preferred Qualifications
Experience in NAND Flash or other non-volatile memory technologies.
Experience with high-speed interfaces (e.g. DDR LPDDR GDDR or SerDes).
Familiarity with design automation scripting (e.g. Python) or AI-assisted design approaches.
Understanding of layout constraints physical design flows and ESD considerations.
About Micron Technology Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich lifefor all. With a relentless focus on our customers technology leadership and manufacturing and operational excellence Micron delivers a rich portfolio of high-performance DRAM NAND and NOR memory and storage products through our Micron and Crucial brands. Every day the innovations that our people create fuel the data economy enabling advances in artificial intelligence and 5G applications that unleash opportunities from the data center to the intelligent edge and across the client and mobile user experience.
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Required Experience:
IC
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