Principal Device Engineer

At Nexperia Manchester we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer you will play a critical role in shaping nextgeneration device concepts driving technology optimisation and influencing earlystage decisions that define our future products.

You will act as a senior technical contributor within BGMOS applying firstprinciples device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems collaborating across functions and turning simulation insights into realworld semiconductor technologies.

What you will do

As a Principal Device Engineer you will lead the TCADdriven development and optimisation of Power Trench MOSFET technologies. You will explore new device architectures analyse performance tradeoffs and translate simulation outcomes into process and layout requirements. You will support technology roadmaps contribute to feasibility studies and troubleshoot devicelevel issues across development and production. You will collaborate closely with Process Integration Product Development Design Manufacturing and Foundry partners acting as a technical anchor for earlystage innovation.

Key responsibilities

• Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation
• Perform electrostatic thermal and reliabilityrelevant simulations to guide device decisions
• Design and refine cell structures termination schemes and nextgeneration device concepts
• Support technology roadmaps with quantitative tradeoff and feasibility analysis
• Translate simulation insights into process layout and structural requirements
• Conduct daytoday TCAD simulations documentation silicon learning support (splits DOE calibration) and troubleshooting of devicelevel issues
• Engage in regular technical exchanges with Process Integration Product Development Design Manufacturing and Foundry partners
• Contribute to intellectual property generation and earlystage concept definition

What you will deliver

• Highquality TCAD simulation outputs and device concept evaluations
• Optimised device architectures and termination schemes
• Quantitative tradeoff analyses supporting technology roadmap decisions
• Clear technical documentation and communication of simulation insights
• Contributions to silicon learning cycles and devicelevel troubleshooting
• Technical inputs that influence product development and industrialisation
• IP disclosures and innovation proposals
• Strong crossfunctional collaboration across BGMOS and manufacturing partners

What you will need

Essential requirements

• MSc or PhD in Electrical Engineering Physics or a related field
• Several years experience in device engineering and TCADbased technology development
• Strong understanding of semiconductor device physics
• Deep expertise with TCAD tools (e.g. Synopsys Sentaurus)
• Experience with Power MOSFET device concepts ideally trenchbased
• Ability to analyse performance reliability and manufacturability tradeoffs
• Strong analytical and problemsolving mindset
• Clear structured technical communication skills
• Ability to travel occasionally as required

Beneficial

• PhD focused on power semiconductor devices
• Industrial or foundry experience in Power MOSFET technology
• Experience with process integration or layoutdriven device optimisation
• Knowledge of highfield effects ruggedness (UIS) and reliability mechanisms
• Understanding of foundry developments and process transfers
• Proactive innovative mindset with the ability to challenge assumptions

Interview process

• Stage 1: Recruiter Review
• Stage 2: Teams interview
• Stage 3: On site or teams final interview and assessment

Your benefits will include

Remuneration & Reward

Excellent starting salary Annual Incentive Plan of up to 20% contributory pension scheme up to 9% recognition rewards scheme EV salary sacrifice scheme income protection and 12 salary life assurance policy.

Health & Wellbeing 33 days annual leave hybrid and flexible working flexible benefits scheme enhanced parental leave onsite medical centre enhanced sick pay subsidised canteen employee assistance programme retail and entertainment discounts a variety of sports and social clubs.

Professional Development Possibility for funded academic support up to PhD level employee goal setting and development plans huge growth potential both internally and globally within the business via both management and technical pathways.

Corporate Social Responsibility & Sustainability A global commitment to becoming carbon neutral by 2035 working with suppliers who embrace and comply with the Nexperia Supplier Code of Conduct paid time off for every employee to support charitable work up to four times per year.

Diversity Equity & Inclusion Corporate members of Neurodiversity in Business and a Disability Confident Employer. Dedicated Employee Resource Groups for Neuroinclusion the LGBTQ community and Women in Nexperia with a commitment to increase women in management positions to 30% by 2030.

Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright material and the word Nexperia is a registered trademark.

D&I Statement

As an equal-opportunity employer Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all and we consider all applicants fairly as well as providing a safe work environment and reasonable adjustments where requested.

In addition we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Womens groups. Nexperia is committed to increasing women in management positions to 30% by 2030.