Intern NAND Memory Cell

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Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity sustainability and giving back to our communities. Because doing so can fuel the very innovation we are pursuing.

Project Title: Electrical Characterization and Modeling of 3D NAND Memory Cells

Project Description

As NAND technology continues to scale in complexity rapid learning from electrical characterization data is critical to device optimization and reliability improvement. This project leverages advanced data analytics to improve the efficiency and effectiveness of traditional characterization workflows.

In this project the intern will:

• Perform electrical evaluation of 3D NAND memory cells including program read and erase behavior.
• Conduct reliability characterization such as endurance cycling and data retention analysis.
• Apply statistical and exploratory data analysis to largescale measurement datasets to identify trends correlations and performance drivers.
• Develop datadriven and physicsinformed NAND device models working closely with device engineers and mentors to translate data insights into physical understanding.
• Utilize automation scripting and visualization tools to improve analysis efficiency and shorten learning cycles.

Training on NAND device fundamentals characterization platforms and data / AI analysis tools will be provided. The intern will have opportunities to collaborate with crossfunctional engineers and contribute to real device learning in advanced NAND technology nodes.

Scope

• Electrical characterization of 3D NAND cell performance and reliability metrics
• Statistical analysis and visualization of large electrical measurement datasets
• Exploration of AI / data analytics techniques to enhance device learning
• Development and refinement of datadriven and physicsbased device models
• Automation of analysis workflows using scripting and visualization tools

Deliverables

• Characterization reports on 3D NAND cell performance and reliability behavior
• Data analytics insights identifying key performance and variability drivers
• Datadriven / physicsinformed NAND device models
• Improved analysis workflows through automation and visualization

Impact of the Project

• Accelerated device learning and modeling for advanced 3D NAND technologies
• Improved understanding of NAND cell performance reliability and variability
• Enhanced efficiency in characterization and data analysis workflows

Skillset requirements:

• The knowledge of and experience of semiconductor devices characterization or/and processes development projects
• The knowledge of and experience with nonvolatile memories is preferred.
• Familiarity with basic data analysis or scripting tools (e.g. Python JSL MATLAB) is a plus
• Solid communication and reporting abilities
• Candidate must be pursuing MS or PhD in Electrical Engineering Computer Science Data Science Physics or a related field

About Micron Technology Inc.

We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich lifefor all. With a relentless focus on our customers technology leadership and manufacturing and operational excellence Micron delivers a rich portfolio of high-performance DRAM NAND and NOR memory and storage products through our Micron and Crucial brands. Every day the innovations that our people create fuel the data economy enabling advances in artificial intelligence and 5G applications that unleash opportunities from the data center to the intelligent edge and across the client and mobile user experience.

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