Job Summary
The postdoctoral research scientist will contribute to the design synthesis and characterization of ferroelectric antiferroelectric and magnetoelectric multiferroic thin films with emphasis on III-nitride ferroelectrics and complex oxides that support emergent switching pathways tunable dielectric and magnetoelectric responses and strong spinlattice coupling. Research activities will include the growth of epitaxial thin films with atomic-scale structural and chemical precision; in-depth measurement of structural dielectric magnetic and electromechanical properties; and exploration of low-frequency collective excitations using the laboratorys distinctive ultra-low-frequency Brillouin and Raman inelastic light-scattering platforms which operate under combined electric- and magnetic-field bias and across a wide temperature range down to cryogenic conditions.
This position is grant-funded; employment is contingent upon the continued availability of those funds.
Essential Functions
- Perform thin-film synthesis using RHEED-assisted pulsed-laser deposition with opportunities to contribute to epitaxial nitride growth and interface-engineered heterostructures.
- Conduct structural characterization including high-resolution X-ray diffraction reciprocal-space analysis and nanoscale structural mapping.
- Collaborate on the use of inelastic light-scattering spectroscopy (Brillouin/Raman) to study collective excitations magnetoelectric coupling dielectric tunability and field-driven phase transitions.
- Analyze experimental data and collaborate with theory teams to develop physical models connecting lattice charge and spin interactions to macroscopic functional responses.
- Participate in device-relevant testing including dielectric magnetic electromechanical RF/microwave and photonic measurements.
- Conduct routine maintenance of experimental platforms and coordinate service with OEM providers.
- Prepare manuscripts conference presentations and program reports.
- Assist with mentoring and training of graduate and undergraduate researchers.
- Perform other duties as assigned.
Required Qualifications
- Minimum of a PhD or Doctorate in materials science and engineering physics electrical engineering or a closely related field orthe equivalent combination of education and work experience. (Please review the Equivalency Chart for additional information.)
- Minimum of 0-3 years of experience.
- Strong experimental background with knowledge of X-ray diffraction and strain-engineered epitaxial films and foundational understanding of ferroelectricity magnetism and ferroic orders.
Preferred Qualifications
- Preferred experience includes thin-film growth (oxide or nitride systems) ferroelectric or multiferroic characterization.
Physical Demands
- Typically sitting at a desk/table
- Typically standing walking
Location
- University City - Philadelphia PA
Additional Information
This position is classified as Exempt grade K. Compensation for this grade ranges from $54630.00 - $81940.00 per year. Please note that the offered rate for thisposition typically aligns with the minimum to midrange of this grade but it can vary based on thesuccessful candidates qualifications and experience department budget and an internal equity review.
Applicants are encouraged to explore the Professional Staff salary structure and CompensationGuidelines & Policies for more details on Drexels compensation information about benefits please review Drexels Benefits Brochure.
Special Instructions to the Applicant
Please make sure you upload your CV/resume and cover letter when submitting your application.
A review of applicants will begin once a suitable candidate pool is identified.
Required Experience:
IC
Job SummaryThe postdoctoral research scientist will contribute to the design synthesis and characterization of ferroelectric antiferroelectric and magnetoelectric multiferroic thin films with emphasis on III-nitride ferroelectrics and complex oxides that support emergent switching pathways tunable d...
Job Summary
The postdoctoral research scientist will contribute to the design synthesis and characterization of ferroelectric antiferroelectric and magnetoelectric multiferroic thin films with emphasis on III-nitride ferroelectrics and complex oxides that support emergent switching pathways tunable dielectric and magnetoelectric responses and strong spinlattice coupling. Research activities will include the growth of epitaxial thin films with atomic-scale structural and chemical precision; in-depth measurement of structural dielectric magnetic and electromechanical properties; and exploration of low-frequency collective excitations using the laboratorys distinctive ultra-low-frequency Brillouin and Raman inelastic light-scattering platforms which operate under combined electric- and magnetic-field bias and across a wide temperature range down to cryogenic conditions.
This position is grant-funded; employment is contingent upon the continued availability of those funds.
Essential Functions
- Perform thin-film synthesis using RHEED-assisted pulsed-laser deposition with opportunities to contribute to epitaxial nitride growth and interface-engineered heterostructures.
- Conduct structural characterization including high-resolution X-ray diffraction reciprocal-space analysis and nanoscale structural mapping.
- Collaborate on the use of inelastic light-scattering spectroscopy (Brillouin/Raman) to study collective excitations magnetoelectric coupling dielectric tunability and field-driven phase transitions.
- Analyze experimental data and collaborate with theory teams to develop physical models connecting lattice charge and spin interactions to macroscopic functional responses.
- Participate in device-relevant testing including dielectric magnetic electromechanical RF/microwave and photonic measurements.
- Conduct routine maintenance of experimental platforms and coordinate service with OEM providers.
- Prepare manuscripts conference presentations and program reports.
- Assist with mentoring and training of graduate and undergraduate researchers.
- Perform other duties as assigned.
Required Qualifications
- Minimum of a PhD or Doctorate in materials science and engineering physics electrical engineering or a closely related field orthe equivalent combination of education and work experience. (Please review the Equivalency Chart for additional information.)
- Minimum of 0-3 years of experience.
- Strong experimental background with knowledge of X-ray diffraction and strain-engineered epitaxial films and foundational understanding of ferroelectricity magnetism and ferroic orders.
Preferred Qualifications
- Preferred experience includes thin-film growth (oxide or nitride systems) ferroelectric or multiferroic characterization.
Physical Demands
- Typically sitting at a desk/table
- Typically standing walking
Location
- University City - Philadelphia PA
Additional Information
This position is classified as Exempt grade K. Compensation for this grade ranges from $54630.00 - $81940.00 per year. Please note that the offered rate for thisposition typically aligns with the minimum to midrange of this grade but it can vary based on thesuccessful candidates qualifications and experience department budget and an internal equity review.
Applicants are encouraged to explore the Professional Staff salary structure and CompensationGuidelines & Policies for more details on Drexels compensation information about benefits please review Drexels Benefits Brochure.
Special Instructions to the Applicant
Please make sure you upload your CV/resume and cover letter when submitting your application.
A review of applicants will begin once a suitable candidate pool is identified.
Required Experience:
IC
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