Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modules

milan - Italy

Monthly Salary: Not Disclosed

Posted on: 15 hours ago

Vacancies: 1 Vacancy

Job Summary

Purpose and Objectives

The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs).

The work will be divided into three main phases:

Phase 1: Technology Analysis and Benchmarking

Objective:
Conduct an in-depth study of GaN technology for inverter applications.

Activities:

Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.
Benchmark GaN against alternative technologies (SiC IGBT) in terms of:
Switching speed
Efficiency
Thermal performance
Reliability and cost implications
Analyze what major OEMs and semiconductor companies are currently implementing in this domain.
Collaborate with NXPs Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.

Expected Outcome:
A comprehensive report summarizing the advantages limitations and market positioning of GaN technology for inverter modules.

Phase 2: Gate Driver Architecture Design for GaN

Objective:
Develop and validate a gate driver architecture optimized for GaN devices.

Activities:

Focus on GaN requirements:
High-speed switching
Low parasitic inductance
Robust protection mechanisms
Perform analog design activities including:
Architecture definition and evaluation
Behavioral modeling and simulation
PVT (Process Voltage Temperature) analysis
Address industrialization aspects ensuring the design meets manufacturability and reliability standards.
Supervise and support layout design activities considering:
Parasitic effects
Signal integrity
Impact of layout on performance

Expected Outcome:
A fully simulated and optimized gate driver architecture for GaN ready for prototyping.

Phase 3: Bench Characterization and Validation

Objective:
Validate the performance of a previous-generation GaN gate driver in NXPs laboratory environment.

Activities:

Perform hands-on bench testing and waveform analysis.
Identify critical issues and limitations in the existing design.
Document findings in a detailed characterization report including:
Measured performance vs. simulated expectations
Recommendations for improvement

Expected Outcome:
A complete validation report highlighting gaps and providing actionable insights for next-generation designs.

Key Deliverables

Literature review and benchmarking report on GaN vs. SiC/IGBT technologies. Gate driver architecture design documentation including simulations and layout considerations. Bench characterization report of previous-generation gate driver.

Required Skills

Analog circuit design and simulation (SPICE-based tools)
Layout design (Cadence Virtuoso or equivalent)
Power electronics fundamentals
Laboratory measurement techniques (oscilloscopes power analyzers)
Collaboration with cross-functional teams (Application Engineering Product Definition)

More information about NXP in Italy...

#LI-7795

Purpose and ObjectivesThe primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs).The wo...

Purpose and Objectives

The work will be divided into three main phases:

Phase 1: Technology Analysis and Benchmarking

Objective:
Conduct an in-depth study of GaN technology for inverter applications.

Activities:

Review state-of-the-art literature and technical papers to understand current trends and advancements in GaN-based power electronics.
Benchmark GaN against alternative technologies (SiC IGBT) in terms of:
Switching speed
Efficiency
Thermal performance
Reliability and cost implications
Analyze what major OEMs and semiconductor companies are currently implementing in this domain.
Collaborate with NXPs Application and Product Definition Team to gather expert insights and feedback on GaN adoption strategies.

Expected Outcome:
A comprehensive report summarizing the advantages limitations and market positioning of GaN technology for inverter modules.

Phase 2: Gate Driver Architecture Design for GaN

Objective:
Develop and validate a gate driver architecture optimized for GaN devices.

Activities:

Focus on GaN requirements:
High-speed switching
Low parasitic inductance
Robust protection mechanisms
Perform analog design activities including:
Architecture definition and evaluation
Behavioral modeling and simulation
PVT (Process Voltage Temperature) analysis
Address industrialization aspects ensuring the design meets manufacturability and reliability standards.
Supervise and support layout design activities considering:
Parasitic effects
Signal integrity
Impact of layout on performance

Expected Outcome:
A fully simulated and optimized gate driver architecture for GaN ready for prototyping.

Phase 3: Bench Characterization and Validation

Objective:
Validate the performance of a previous-generation GaN gate driver in NXPs laboratory environment.

Activities:

Perform hands-on bench testing and waveform analysis.
Identify critical issues and limitations in the existing design.
Document findings in a detailed characterization report including:
Measured performance vs. simulated expectations
Recommendations for improvement

Expected Outcome:
A complete validation report highlighting gaps and providing actionable insights for next-generation designs.

Key Deliverables

Required Skills

Analog circuit design and simulation (SPICE-based tools)
Layout design (Cadence Virtuoso or equivalent)
Power electronics fundamentals
Laboratory measurement techniques (oscilloscopes power analyzers)
Collaboration with cross-functional teams (Application Engineering Product Definition)

More information about NXP in Italy...

#LI-7795